Some effects of stress in Goss-oriented silicon-iron
- 1 September 1978
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Magnetics
- Vol. 14 (5) , 353-355
- https://doi.org/10.1109/tmag.1978.1059884
Abstract
The magnetic characteristics of Goss-oriented 3% silicon-iron are dependent to a large extent on mechanical stress. This paper describes some effects of applying orthogonal planar stresses to single samples of commercial silicon-iron. Tensile or compressive stresses up to 10 MN/m2were applied simultaneously along and perpendicular to the rolling direction and the material was magnetized along either direction sinusoidally up to 1.7 T. Power loss and magnetostriction were measured under various stress conditions. The stress dependence of the properties did not vary with flux density in the samples tested. Orthogonal stresses of opposite signs always caused a degradation of properties whereas stresses of the same sign usually improved the characteristics. Previously, it has been shown that a stress in the transverse direction had the same effect as a longitudinal stress of half its value. In these experiments this was found not to be the case possibly because the elastic properties of the steel were different due to complex coating stresses.Keywords
This publication has 4 references indexed in Scilit:
- Influence of stress on rotational loss in silicon ironProceedings of the Institution of Electrical Engineers, 1978
- Effects of stresses on magnetic properties of silicon-iron laminationsJournal of Materials Science, 1974
- Dynamic magnetostriction and mechanical strain in oriented 3% silicon-iron sheet subject to combined longitudinal and transverse stressesProceedings of the Institution of Electrical Engineers, 1967
- The effect of stress on the domain structure of Goss textured silicon-ironBritish Journal of Applied Physics, 1964