Evidence for a Selenium Donor Level above the Principal Conduction Band Edge in GaSb
- 1 January 1962
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 33 (1) , 26-28
- https://doi.org/10.1063/1.1728521
Abstract
Low‐temperature Hall coefficient and resistivity data on selenium‐doped GaSb are interpreted under the assumption that selenium introduces a donor level above the principal [000] conduction band minimum. The postulated level is associated with electrons in [111] valleys localized in hydrogen‐like orbits around selenium atoms. The results at 77°K are consistent with the assumption that impurity scattering is dominant and that a selenium donor level is located about 0.07 ev above the principal conduction band edge at 77°K. The low‐temperature data on tellurium‐doped samples are also discussed.This publication has 15 references indexed in Scilit:
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