Annealing and electrical properties of Hg1−xCdxTe grown by OMVPE
- 31 December 1990
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 106 (4) , 513-523
- https://doi.org/10.1016/0022-0248(90)90024-f
Abstract
No abstract availableKeywords
This publication has 22 references indexed in Scilit:
- Annealing behavior of undoped Hg0.8Cd0.2Te epitaxial films at low temperaturesJournal of Applied Physics, 1989
- Evidence of anomalous behavior in low-n-type mercury cadmium telluride induced by extended defectsJournal of Vacuum Science & Technology A, 1989
- Anomalous Hall effect in p-type Hg1−xCdxTe liquid-phase-epitaxial layersJournal of Applied Physics, 1987
- Electrical properties and annealing behaviour of CdxHg1−xTe grown by LPE and MOVPEJournal of Crystal Growth, 1986
- The existence region of the Hg0.8Cd0.2Te phase fieldJournal of Electronic Materials, 1985
- Hall effect and resistivity in liquid-phase-epitaxial layers of HgCdTeJournal of Applied Physics, 1984
- Lpe growth of Hgl−xCdxTe using conventional slider boat and effects of annealing on properties of the epilayersJournal of Electronic Materials, 1984
- Effects of annealing on the electrical properties of CdxHg1−xTeJournal of Applied Physics, 1982
- Lattice Defects in Semiconducting Hg1 − x Cd x Te Alloys: I . Defect Structure of Undoped and Copper DopedJournal of the Electrochemical Society, 1981
- The effect of annealing temperature on the carrier concentration OF Hg0.6Cd0.4TeJournal of Electronic Materials, 1978