Inversion-mode InP MISFET employing phosphorus-nitride gate insulator

18 February 1982

journal article
Published by Institution of Engineering and Technology (IET) in Electronics Letters

Vol. 18 (4) , 180-181
https://doi.org/10.1049/el:19820124

Abstract

A phosphorus-nitride (P₃N₅) CVD was newly developed for preparation of a high-quality gate insulator on an InP substrate. This film exhibited ohmic conduction with a breakdown field intensity as high as 1×10⁷ V/cm. An inversion-mode n-channel InP MISFET was fabricated employing the phosphorus-nitride CVD film as a gate insulator. An effective electron mobility of 1000–1640 cm²/Vs was obtained for this device.

Keywords

BREAKDOWN FIELD INTENSITY
OHMIC CONDUCTION
INP INVERSION MODE MISFET
EFFECTIVE ELECTRON MOBILITY
CVD FILM
P3N5 GATE INSULATOR
N-CHANNEL MISFET

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