Lateral Confinement of Silicide Layers Synthesized with High Dose Implantation and Annealing
- 1 January 1989
- journal article
- Published by Springer Nature in MRS Proceedings
Abstract
No abstract availableKeywords
This publication has 4 references indexed in Scilit:
- Synthesis of Buried Silicon Compounds Using Ion ImplantationMRS Proceedings, 1988
- Mesotaxy: Single-crystal growth of buried CoSi2 layersApplied Physics Letters, 1987
- Quantum Transport and Surface ScatteringPhysical Review Letters, 1986
- Electrical transport properties of CoSi2 and NiSi2 thin filmsApplied Physics Letters, 1984