A highly compact, wideband GaAs MESFET X-Ku band receiver MMIC
- 9 December 2002
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
- p. 529-532 vol.2
- https://doi.org/10.1109/mwsym.1991.147054
Abstract
A fully integrated MMIC (microwave monolithic integrated circuit) receiver was designed and fabricated using the ion-implanted GaAs MESFET 0.5 mu m process. This MMIC receiver incorporates a two-stage RF amplifier, a two-stage LO (local oscillator) amplifier, an IF (intermediate frequency) amplifier, and a singly balanced diode mixer. Better than 10 dB conversion gain is achieved from 9 to 20 GHz. The LO to IF isolation is better than 30 dB. This chip operates from a single +5 VDC and draws 175 mA. Total chip size is 3.5 mm*3.0 mm.Keywords
This publication has 2 references indexed in Scilit:
- An X-band monolithic double-balanced mixer for high dynamic receiver applicationPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2002
- An 8-15 GHz GaAs Monolithic Frequency ConverterPublished by Institute of Electrical and Electronics Engineers (IEEE) ,1987