Threading Dislocation Density Reduction in GaAs on Si Substrates

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Abstract
The effects of annealing and insertion of strained intermediate layers on the reduction of threading dislocation density are investigated through etch-pit density evaluation. A model to explain the efficiency of the reduction techniques is proposed, which is that larger forces exerted on the dislocation lines lead to more effective dislocation reduction. This indicates that thicker layers in the annealing process and thicker strained intermediate layers within the critical thickness for dislocation generation give rise to better dislocation reduction effects.