IMPATT diode quasi-static large-signal model

1 August 1974

journal article
Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices

Vol. 21 (8) , 469-479
https://doi.org/10.1109/T-ED.1974.17952

Abstract

A quasi-static large-signal model of an IMPATT diode with general doping profile is derived. The numerical solution of this model has been implemented in a Fortran IV program which executes economically. This model has been used to analyze large-and small-signal admittances of GaAs double-drift and quasi-Read IMPATT diodes. The small-signal results are in good agreement with calculations done using a linearized small-signal model. The large-signal calculations exhibit power and efficiency saturation when reasonable values of parasitic resistance are included and are in good agreement with experimental GaAs diode performance. The generalized quasi-static formulation simplifies analysis of IMPATT structures with arbitrary doping profiles, specifically those with distributed avalanche zones, by providing the correspondence between these devices and the Read diode model.

Keywords

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