Experimental and theoretical studies of I—V characteristics of zinc-doped silicon p-n junctions using the exact DC circuit model
- 1 June 1979
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices
- Vol. 26 (6) , 937-941
- https://doi.org/10.1109/t-ed.1979.19521
Abstract
The exact distributed steady-state equivalent circuit model is used to calculate the forward current-voltage characteristics of zinc-doped p-n junction diodes. The experimental values of the Shockley-Read-Hall (SRH) coefficients at zinc centers in silicon and measured recombination center (zinc) density were used in the model. The theoretical forwardI-Vcharacteristics are compared with experimentalI-Vover a wide range of temperatures, showing excellent agreement.Keywords
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