An analytic theory of the impact of velocity overshoot on the drain characteristics of field-effect transistors
- 1 March 1992
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices
- Vol. 39 (3) , 740-742
- https://doi.org/10.1109/16.123505
Abstract
No abstract availableKeywords
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