A novel biased anti-parallel Schottky diode structure for subharmonic mixing
- 1 October 1994
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Microwave and Guided Wave Letters
- Vol. 4 (10) , 341-343
- https://doi.org/10.1109/75.324710
Abstract
Subharmonically pumped mixers using zero-biased anti-parallel Schottky diode pairs produce good results, but require a larger LO power than biased Schottky diodes. Presented here is a novel planar-diode anti-parallel pair that allows independent biasing of the two diodes. This diode pair is integrated into a quasi-optical wideband receiver and the RF measurements on a 1.2-/spl mu/m anode diameter pair show a reduced LO power requirement at 180 GHz by a factor of 2 to 3 with a similar DSB conversion loss and noise temperature (9.7 dB and 1850 K) to an unbiased Schottky diode pair. This structure has potential for applications at submillimeter-wave frequencies where a large amount of LO power is not easily available.Keywords
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