Memory Devices Based on Lanthanide (Sm3+, Eu3+, Gd3+) Complexes
- 7 April 2006
- journal article
- research article
- Published by American Chemical Society (ACS) in Inorganic Chemistry
- Vol. 45 (9) , 3701-3704
- https://doi.org/10.1021/ic051783y
Abstract
Memory effects in single-layer organic light-emitting devices based on Sm3+, Gd3+, and Eu3+ rare earth complexes were realized. The device structure was indium-tin-oxide (ITO)/3,4-poly(ethylenedioxythiophene)-poly(styrenesulfonate) (PEDOT)/Poly(N-vinyl carbazole) (PVK): rare earth complex/LiF/Ca/Ag. It was found experimentally that all the devices exhibited two distinctive bistable conductivity states in current-voltage characteristics by applying negative starting voltage, and more than 10(6) write-read-erase-reread cycles were achieved without degradation. Our results indicate that the rare earth organic complexes are promising materials for high-density, low-cost memory application besides the potential application as organic light-emitting materials in display devices.Keywords
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