OBSERVATION OF PROPAGATION CUTOFF AND ITS CONTROL IN THIN OPTICAL WAVEGUIDES

Abstract
The first observation of optical cutoff in thin‐film waveguides is reported. The waveguides consist of thin (∼10μ) epitaxial layers of high‐resistivity GaAs deposited on lower‐resistivity GaAs substrates. The optical cutoff is controlled through the electro‐optic effect by applying an electric field across the epitaxial layer.

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