Large-Signal Silicon and Germanium Avalanche-Diode Characteristics
- 1 November 1970
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Microwave Theory and Techniques
- Vol. 18 (11) , 872-876
- https://doi.org/10.1109/tmtt.1970.1127364
Abstract
No abstract availableThis publication has 7 references indexed in Scilit:
- The effect of injecting contacts on avalanche diode performanceIEEE Transactions on Electron Devices, 1971
- Active IMPATT Diode Parameters Obtained by Computer Reduction of Experimental DataIEEE Transactions on Microwave Theory and Techniques, 1970
- Nonlinear analysis of the avalanche transit-time oscillatorIEEE Transactions on Electron Devices, 1969
- Computer-Aided Small-Signal Characterization of IMPATT DiodesIEEE Transactions on Microwave Theory and Techniques, 1969
- Computer-Aided Microwave Impedance MeasurementsIEEE Transactions on Microwave Theory and Techniques, 1969
- Large-signal analysis of a silicon Read diode oscillatorIEEE Transactions on Electron Devices, 1969
- Characterization and modeling of IMPATT oscillatorsIEEE Transactions on Electron Devices, 1968