Trapped positive charge in plasma-enhanced chemical vapor deposited silicon dioxide films
- 12 March 1990
- journal article
- conference paper
- Published by AIP Publishing in Applied Physics Letters
- Vol. 56 (11) , 1037-1039
- https://doi.org/10.1063/1.103327
Abstract
We report an investigation of trapped positive charge in as‐fabricated plasma‐enhanced chemical vapor deposited SiO2 films using electrical and spin resonance techniques. We show that the positive charge results from donor‐like ‘‘slow’’ interface states (‘‘anomalous positive charge’’) rather than trapped holes, and that most (∼95%) of the positive charge is not related to E’ centers. The positive charge is similar to that seen in electron‐injected thermally grown SiO2, and unlike radiation‐induced trapped holes.Keywords
This publication has 23 references indexed in Scilit:
- IIIB-5 Fabrication of thin gate Oxide MOSFET's using low-temperature plasma-enhanced chemical-vapor-deposited SiO2IEEE Transactions on Electron Devices, 1987
- Electrical characteristics of very thin SiO2deposited at low substrate temperaturesIEEE Electron Device Letters, 1987
- Electron spin resonance study of high field stressing in metal-oxide-silicon device oxidesApplied Physics Letters, 1986
- Low-temperature deposition of high-quality silicon dioxide by plasma-enhanced chemical vapor depositionJournal of Applied Physics, 1986
- Generation of positive charge in silicon dioxide during avalanche and tunnel electron injectionJournal of Applied Physics, 1985
- High-field and current-induced positive charge in thermal SiO2 layersJournal of Applied Physics, 1985
- Hole traps and trivalent silicon centers in metal/oxide/silicon devicesJournal of Applied Physics, 1984
- Standardized Terminology for Oxide Charges Associated with Thermally Oxidized SiliconJournal of the Electrochemical Society, 1980
- Observation and analysis of the primary 29Si hyperfine structure of the E′ center in non-crystalline SiO2Solid State Communications, 1974
- Study of Silicon-Silicon Dioxide Structure by Electron Spin Resonance IJapanese Journal of Applied Physics, 1971