Low threshold, high power, vertical-cavity surface-emitting lasers
- 10 October 1991
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 27 (21) , 1984-1985
- https://doi.org/10.1049/el:19911229
Abstract
By optimising mirror reflectivities, number of quantum wells, and mirror doping, record continuous wave (CW) output power levels and low threshold currents have been achieved. Broad area devices yielded > 12mW CW and > 500mW pulsed, 6 μn devices gave submilliampere threshold currents and output power > 1 mW and 10 μm devices showed output powers > 3mW with a threshold of 1.5mA.Keywords
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