First-order parameter extraction on enhancement silicon MOS transistors
- 1 January 1986
- journal article
- Published by Institution of Engineering and Technology (IET) in IEE Proceedings I Solid State and Electron Devices
- Vol. 133 (2) , 49-54
- https://doi.org/10.1049/ip-i-1.1986.0011
Abstract
A novel transformation technique has been devised which enables the rapid evaluation of the key MOS transistor parameters, threshold voltage, gain and mobility degradation factor without recourse to the inaccurate compromise approaches previously used. In the paper, the previous methods are reviewed to highlight the errors which can occur, and then the new technique detailed. Extensions to the technique are discussed to enable three of the global parameters to be determined. Finally, a test block is described which is suitable for the parameter extraction routine developed.Keywords
This publication has 1 reference indexed in Scilit:
- The Simulation of MOS Integrated Circuits Using SPICE2Published by Defense Technical Information Center (DTIC) ,1980