Charge-carrier dynamics in GaAs multiple quantum wells determined by contactless photoconductivity measurements
- 15 October 1986
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 34 (8) , 5918-5920
- https://doi.org/10.1103/physrevb.34.5918
Abstract
Charge-carrier dynamics in GaAs multiple quantum wells at room temperature are studied by a microwave conductivity technique with a time resolution of 0.7 ns. It is shown that excess charge carriers decay via a first-order process where the carrier lifetime depends on the layer thickness and doping level.Keywords
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