Quantitative Auger analysis by depth profiling of line shapes: Application to native oxide-InSb interfaces

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Abstract
We report on a technique developed for improving quantitative analysis of Auger electron spectroscopy data by monitoring line shapes, peak energies, and ratios, in addition to peak heights, as a function of sputtering time. The technique proves to be useful for analysis of InSb-native oxide interfaces due to the sensitivity of the AES lines of the different constituents to their chemical state. Thus important information can be obtained on the detailed structure and composition of these oxides and their interfaces, specifically, concerning quantitative determination of interface boundaries. The technique is discussed with typical results and possible extension to other interfaces.

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