Nature of Defects Arising from Fast Neutron Irradiation of Silicon Single Crystals

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Abstract
A method is described for determining the range of sizes that damaged regions created by fast neutrons may have in a silicon single crystal. In particular the use of precision ultrasonic velocity and attenuation measurements for compressional waves together with certain new results from scattering theory permit the determination of an upper and lower limit on the size of a damaged region. The lower limit is determined from the fractional velocity change arising from the irradiation and the upper limit is found from the corresponding attenuation change—or in this case the lack of it.