High-surface-area SnO2: a novel semiconductor-oxide gas sensor
- 1 February 1998
- journal article
- Published by Elsevier in Materials Letters
- Vol. 34 (1-2) , 99-102
- https://doi.org/10.1016/s0167-577x(97)00142-0
Abstract
No abstract availableKeywords
This publication has 12 references indexed in Scilit:
- Spontaneous solution-sol-gel process for preparing tin oxide monolithJournal of Materials Research, 1996
- Nanoporous zirconium oxide prepared using the supramolecular templating approachCatalysis Letters, 1996
- Preparation and characterisation of mesoporous, high-surface-area zirconium(IV) oxideJournal of Materials Chemistry, 1996
- Mesoporous phases based on SnO2 and TiO2Chemical Communications, 1996
- Surfactant controlled preparation of mesostructured transition-metal oxide compoundsJournal of the Chemical Society, Chemical Communications, 1994
- A new family of mesoporous molecular sieves prepared with liquid crystal templatesJournal of the American Chemical Society, 1992
- Formation of SnO2 gels from dispersed sols in aqueous colloidal solutionsJournal of Non-Crystalline Solids, 1990
- The catalytic oxidation of carbon monoxide on tin(IV) oxideJournal of Catalysis, 1973
- A proton magnetic resonance and electron diffraction study of the thermal decomposition of tin(IV) hydroxidesInorganic Chemistry, 1967
- A New Detector for Gaseous Components Using Semiconductive Thin Films.Analytical Chemistry, 1962