Optical Emission Spectrum of Cl2 ECR Plasma in the GaAs Reactive Ion Beam Etching (RIBE) System
- 1 March 1984
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 23 (3A) , L156
- https://doi.org/10.1143/jjap.23.l156
Abstract
An optical emission spectrum was obtained from a Cl2 ECR plasma during GaAs etching in the RIBE system. Most emissive species were identified as atomic chlorines rather than molecular chlorines, typically when the ECR plasma was excited at the 300 W microwave power and the 500 V ion extraction voltage. From the relationship between the monitored emission intensity and the sputter yield as a function of the Cl2 gas pressure, the neutral etching species which chemically assist the ion beam etching undergone here were found to be the chlorine neutral radicals rather than the molecular species.Keywords
This publication has 2 references indexed in Scilit:
- GaAs and GaAlAs Equi-Rate Etching Using a New Reactive Ion Beam Etching SystemJapanese Journal of Applied Physics, 1983
- CCl4 and Cl2 Plasma Etching of III–V Semiconductors and the Role of Added O 2Journal of the Electrochemical Society, 1982