Controlled p‐type impurity doping of Hg1−xCdxTe during growth by molecular‐beam epitaxy

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Abstract
Reproducible and controlled hole concentrations were achieved by silverdoping during molecular‐beam epitaxialgrowth of p‐type Hg1−x Cd x Te. (100)‐ and (111)‐oriented p‐type layers with 0.18<x<0.25 were grown on GaAs substrates with CdTe buffer layers. The measured hole concentrations of these samples ranged from 101 6 to 101 8 cm− 3 and, when normalized to the growth rate, were found to have an approximately exponential relationship to the temperature of the Ag effusion cell. Measurements of the minority carrier lifetimes of Ag‐doped epilayers with activated acceptor concentrations near 2×101 6 cm− 3 are consistent with those predicted for Auger recombination mechanisms. Secondary‐ion mass spectrometry studies indicate that under suitable growth conditions Agdiffusion is minimal and dopant profiles can be controlled.

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