Characterization of Insertion Loss and Back Reflection in Passive Hybrid Silicon Tapers
Open Access
- 11 February 2013
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Photonics Journal
- Vol. 5 (2) , 6600410
- https://doi.org/10.1109/jphot.2013.2246559
Abstract
The optical properties of two hybrid silicon taper designs are investigated. These tapers convert the optical mode from a silicon waveguide to a hybrid silicon III/V waveguide. A passive chip was fabricated with an epitaxial layer similar to those used in hybrid silicon lasers. To separate optical scattering and mode mismatch from quantum-well absorption, the active layer in this paper was designed to be at 1410 nm, to allow measurements at 1550 nm. Using cutback structures, the taper loss and the taper reflection are quantified. Taper losses between 0.2 and 0.6 dB per taper and reflections below -41 dB are measured.Keywords
This publication has 17 references indexed in Scilit:
- Low-Threshold Heterogeneously Integrated InP/SOI Lasers With a Double Adiabatic Taper CouplerIEEE Photonics Technology Letters, 2011
- An Integrated Hybrid Silicon Multiwavelength AWG LaserIEEE Journal of Selected Topics in Quantum Electronics, 2011
- Hybrid Integrated Platforms for Silicon PhotonicsMaterials, 2010
- Monolithic AWG-based Discretely Tunable Laser Diode With Nanosecond Switching SpeedIEEE Photonics Technology Letters, 2009
- A hybrid AlGaInAs-silicon evanescent preamplifier and photodetectorOptics Express, 2007
- Reduced reflections from multimode interference couplersElectronics Letters, 2006
- 10 Gb/s CMOS photonics technologyPublished by SPIE-Intl Soc Optical Eng ,2006
- Realization and modeling of a 27-GHz integrated passively mode-locked ring laserIEEE Photonics Technology Letters, 2005
- Epitaxial III−V Nanowires on SiliconNano Letters, 2004
- What limits the maximum output power of long-wavelength AlGaInAs/InP laser diodes?IEEE Journal of Quantum Electronics, 2002