InP-Langmuir-film m.i.s. structures

15 September 1977

journal article
Published by Institution of Engineering and Technology (IET) in Electronics Letters

Vol. 13 (19) , 581-583
https://doi.org/10.1049/el:19770415

Abstract

The electrical properties of m.i.s. structures based on InP and Langmuir films have been investigated. A strongly inverted low-frequency-type C/V response occurs at about 30 Hz. Surface-state distributions have been evaluated by using both quasistatic and conductance techniques. Effective surface-state densities are found to be ~3 × 10¹¹cm⁻² eV⁻¹ over a large fraction of the band gap.

Keywords

SURFACE STATE DENSITY
LANGMUIR FILMS
CONDUCTANCE TECHNIQUES
C/V RESPONSE
MIS STRUCTURES
QUASISTATIC
INP

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