Metastability Under High-Intensity Light of Device-Quality He-Diluted, H2-Diluted and Standard a-Si:H Films Deposited Between 50°C and 350°C
- 1 January 1994
- journal article
- Published by Springer Nature in MRS Proceedings
Abstract
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This publication has 15 references indexed in Scilit:
- Experimental study of disorder and defects in undoped a-Si:H as a function of annealing and hydrogen evolutionJournal of Non-Crystalline Solids, 1993
- Hydrogen, microstructure and defect density in hydrogenated amorphous siliconJournal de Physique I, 1992
- Infrared absorption strength and hydrogen content of hydrogenated amorphous siliconPhysical Review B, 1992
- Defect density and hydrogen bonding in hydrogenated amorphous silicon as functions of substrate temperature and deposition ratePhilosophical Magazine Part B, 1992
- A fully automated hot-wall multiplasma-monochamber reactor for thin film depositionJournal of Vacuum Science & Technology A, 1991
- Light-induced degradation in a-Si alloy solar cells at intense illuminationAIP Conference Proceedings, 1991
- How to reach more precise interpretation of subgap absorption spectra in terms of deep defect density in a-Si:HJournal of Non-Crystalline Solids, 1991
- Dependence of the saturated light-induced defect density on macroscopic properties of hydrogenated amorphous siliconApplied Physics Letters, 1990
- New stable microwave plasma passivated a-Si MIS cells with high open circuit voltageApplied Physics A, 1988
- ESR and Constant Photocurrent Studies of Surface and Bulk Defects in a-Si:HJapanese Journal of Applied Physics, 1987