Electron transport in semiconductors in the presence of impact ionization
- 1 January 1981
- journal article
- Published by Elsevier in Journal of Physics and Chemistry of Solids
- Vol. 42 (10) , 891-896
- https://doi.org/10.1016/0022-3697(81)90014-7
Abstract
No abstract availableKeywords
This publication has 7 references indexed in Scilit:
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- Monte Carlo determination of electron transport properties in gallium arsenideJournal of Physics and Chemistry of Solids, 1970
- Theory of Avalanche Breakdown in InSb and InAsPhysical Review B, 1968
- Quantum efficiency and overlap integrals in InSbCzechoslovak Journal of Physics, 1967
- Theory of Electron Multiplication in Silicon and GermaniumPhysical Review B, 1954