Epitaxial growth of single crystal Cd1-xZnxS layers on (111) GaAs substrates using the close-spaced geometry
- 1 October 1978
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 44 (3) , 306-314
- https://doi.org/10.1016/0022-0248(78)90030-1
Abstract
No abstract availableKeywords
This publication has 14 references indexed in Scilit:
- Vapor Phase Epitaxial Growth of ZnxCd1-xS Layers on ZnS SubstratesJapanese Journal of Applied Physics, 1977
- II-VI solid-solution films by spray pyrolysisJournal of Applied Physics, 1977
- II–VI compounds in solar energy conversionJournal of Crystal Growth, 1977
- ZnxCd1−xS films for use in heterojunction solar cellsApplied Physics Letters, 1976
- Lasing characteristics and growth of CdS epitaxial thin-films excited by second harmonic Nd: YAG laser radiation at 473 nmOptics Communications, 1976
- Variations du pourcentage de ZnS dans des solutions solides de ZnxCd1−xS obtenues par pulvérisation cathodique reactiveThin Solid Films, 1973
- Preparation and some properties of ternary CdxZn1−xs polycrystalline thin filmsPhysica Status Solidi (a), 1972
- Structural and Optical Properties of Thin Films of Zn[sub x]Cd[sub (1−x)]SJournal of the Electrochemical Society, 1966
- Chemical Spray Deposition Process for Inorganic FilmsJournal of the Electrochemical Society, 1966
- The Use of Close Spacing in Chemical-Transport Systems for Growing Epitaxial Layers of SemiconductorsJournal of the Electrochemical Society, 1963