780 nm AlGaAs DFB lasers fabricated by MOCVD

18 February 1988

journal article
Published by Institution of Engineering and Technology (IET) in Electronics Letters

Vol. 24 (4) , 239-240
https://doi.org/10.1049/el:19880161

Abstract

Continuous single mode oscillation was obtained in AlGaAs DFB lasers operating at approximately 780 nm at room temperature. DFB lasers have a low threshold current of about 25 mA and can be operated at an output level of up to 10 mW in stable, single longitudinal mode.

Keywords

SEMICONDUCTOR LASERS
LOW THRESHOLD CURRENT
SINGLE LONGITUDINAL MODE
ROOM TEMPERATURE
25 MA
RIB WAVEGUIDE SCH TYPE
MOCVD
DFB LASERS
ALGAAS-GAAS
STABLE CONTINUOUS SINGLE MODE OPERATION
10 MW
780 NM

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