High-efficiency, low-leakage MOCVD-grown GaInAs/AlInAs heterojunction photodiodes for detection to 2.4μm

23 October 1986

journal article
Published by Institution of Engineering and Technology (IET) in Electronics Letters

Vol. 22 (22) , 1206-1207
https://doi.org/10.1049/el:19860826

Abstract

Photodiodes with a long-wavelength cutoff extending out to 2.4 μm have been fabricated from MOCVD-grown Ga_0.28-In_{0 72}As/Al_0.28In_0.72As heterostructures, using a compositionally graded buffer layer to accommodate the lattice mismatch between the active layer and the InP substrate. These devices exhibit peak efficiency as high as 95% at 1.8–2.2μm with dark currents as low as 35 nA at −0.5 V reverse bias.

Keywords

III-V SEMICONDUCTORS
OPTICAL COMMUNICATION EQUIPMENT
VPE
IR DETECTORS
HETEROJUNCTION PHOTODIODES
INFRARED-REGION
MOCVD
LATTICE MISMATCH
INP
1.8 TO 2.4 MICRON
LONG-WAVELENGTH CUTOFF
COMPOSITIONALLY GRADED BUFFER LAYER
SEMICONDUCTOR GROWTH
GAINAS-ALINAS-INP

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