120 Watt, 2 GHz, Si LDMOS RF power transistor for PCS base station applications
- 27 November 2002
- proceedings article
- Published by Institute of Electrical and Electronics Engineers (IEEE)
- Vol. 2, 707-710
- https://doi.org/10.1109/mwsym.1998.705089
Abstract
No abstract availableThis publication has 3 references indexed in Scilit:
- Silicon MOSFETs, the microwave device technology for the 1990sPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2002
- High performance silicon LDMOS technology for 2 GHz RF power amplifier applicationsPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2002
- Characterization of A 2 GHz Submicron Bipolar 60 Watt Power Transistor with Single Tone, Multi-Tone, and Cdma SignalsPublished by Institute of Electrical and Electronics Engineers (IEEE) ,1996