Epitaxial Growth of Bulk-Quality Gallium Arsenide on Gallium Arsenide and Germanium Substrates
- 1 September 1966
- journal article
- conference paper
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 37 (10) , 3909-3910
- https://doi.org/10.1063/1.1707949
Abstract
No abstract availableThis publication has 9 references indexed in Scilit:
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- Carrier Generation and Recombination in P-N Junctions and P-N Junction CharacteristicsProceedings of the IRE, 1957