Switching power dependence on detuning and current in bistable diode laser amplifiers
- 18 February 1991
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 58 (7) , 687-689
- https://doi.org/10.1063/1.104569
Abstract
No abstract availableKeywords
This publication has 6 references indexed in Scilit:
- Linewidth broadening factor in semiconductor lasers--An overviewIEEE Journal of Quantum Electronics, 1987
- Femtojoule optical switching in nonlinear semiconductor laser amplifiersApplied Physics Letters, 1986
- A comparison of active and passive optical bistability in semiconductorsIEEE Journal of Quantum Electronics, 1985
- The carrier-induced index change in AlGaAs and 1.3 µm InGaAsP diode lasersIEEE Journal of Quantum Electronics, 1983
- Carrier lifetime measurement for determination of recombination rates and doping levels of III-V semiconductor light sourcesApplied Physics Letters, 1982
- Analytical approximation of the radiation confinement factor for the TE0mode of a double heterojunction laserIEEE Journal of Quantum Electronics, 1978