Rotating Scan for Ion Implantation

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Abstract
With the development of 1–2 mA beam current ion sources, production implantation systems became limited by scanning techniques. In particular, high beam currents could not be used efficiently for low and moderate dose implants. To overcome this deficiency, a multiwafer rotating mechanical scan technique was developed. Combining the high speed advantage of low current electrical scan and the high current capability of mechanical scan, the rotating scan technique can achieve implantation times of less than 1 sec per 2 in. wafer at full beam current with better than 99% uniformity.

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