On the band offsets of AlGaAs/GaAs and beyond
- 1 February 1986
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 29 (2) , 133-139
- https://doi.org/10.1016/0038-1101(86)90031-6
Abstract
No abstract availableKeywords
This publication has 58 references indexed in Scilit:
- Modulation-doped GaAs/AlGaAs heterojunction field-effect transistors (MODFET's), ultrahigh-speed device for supercomputersIEEE Transactions on Electron Devices, 1984
- High-magnetic-field transport in a dilute two-dimensional electron gasPhysical Review B, 1983
- Heterostructure devices: A device physicist looks at interfacesSurface Science, 1983
- Energy Structure and Quantized Hall Effect of Two-Dimensional HolesPhysical Review Letters, 1983
- Band-gap engineering via graded gap, superlattice, and periodic doping structures: Applications to novel photodetectors and other devicesJournal of Vacuum Science & Technology B, 1983
- Heterostructure bipolar transistors: What should we build?Journal of Vacuum Science & Technology B, 1983
- Two-Dimensional Magnetotransport in the Extreme Quantum LimitPhysical Review Letters, 1982
- Extremely low threshold (AlGa)As modified multiquantum well heterostructure lasers grown by molecular-beam epitaxyApplied Physics Letters, 1981
- Electrons at InterfacesPublished by Elsevier ,1980
- Recent developments in molecular beam epitaxy (MBE)Journal of Vacuum Science and Technology, 1979