Improved quantification and detection limits for oxygen analysis in AlxGa1−x As/GaAs multilayers with secondary ion mass spectroscopy

1 May 1989

journal article
Published by American Vacuum Society in Journal of Vacuum Science & Technology A

Vol. 7 (3) , 1663-1672
https://doi.org/10.1116/1.576067

Abstract

The different contributions to the oxygen background signal in secondary ion mass spectroscopy measurements on AlGaAs and GaAs are investigated. The instrumental parameters for obtaining the lowest detection limits are established. The advantage of a heated sample holder, which reduces the oxygen background quickly after sample introduction in combination with the liquid-nitrogen cryoshield is demonstrated. A complete quantification procedure for oxygen in AlGaAs/GaAs multilayer structure is presented. Even at a conventional vacuum pressure 1×10−9 Torr and a primary current density allowing good depth resolution, a detection limit of oxygen in GaAs of 5×1015 cm−3 could be achieved, increasing with Al content to 1×1017 cm−3 in AlAs.

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