Band-edge photoluminescence of CuGaSe2 films grown by molecular beam epitaxy
- 15 April 1996
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 79 (8) , 4318-4322
- https://doi.org/10.1063/1.361800
Abstract
Slightly Cu‐rich CuGaSe2 films were grown on [001] oriented GaAs substrates by molecular beam epitaxy. Photoluminescence of the films showed a remarkable emission peaked at 1.71 eV at low temperature, which is attributed to recombination of free excitons and bound excitons. The dissociation energy of free excitons and their localization energy to a center are found to be 16.2 and 3.3 meV, respectively. The band‐gap energy Eg is estimated to be 1.7310 eV at low temperature. It is suggested that the temperature variation of Eg is dominated by interaction with phonons of 26 meV which corresponds to the mean energy of the optical phonons in CuGaSe2.This publication has 13 references indexed in Scilit:
- Heteroepitaxy and characterization of CuInSe2 on GaAs(001)Journal of Crystal Growth, 1995
- Determination of the dilation and vibrational contributions to the energy band gaps in germanium and siliconPhysica Status Solidi (b), 1979
- Modulation of Mössbauer radiation by coherent ultrasonic excitation in crystalsPhysica Status Solidi (b), 1979
- Lattice reflectivity spectra of CuGaS2‐CuGaSe2 solid solutionsPhysica Status Solidi (b), 1977
- Excitonic Structure of CuGaS2xSe2(1-x)and CuAlS2xSe2(1-x)Japanese Journal of Applied Physics, 1977
- Aspects of the band structure of CuGaand CuGaPhysical Review B, 1975
- Extension of the Quasicubic Model to Ternary Chalcopyrite CrystalsPhysical Review B, 1971
- Absorption and Luminescence of Excitons at Neutral Donors in Gallium PhosphidePhysical Review B, 1967
- Temperature dependence of the energy gap in semiconductorsPhysica, 1967
- Configuration Coordinate Curves for-Centers in Alkali Halide CrystalsPhysical Review B, 1956