Charge handling capacity in charge coupled devices

1 October 1977

journal article
Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices

Vol. 24 (10) , 1234-1238
https://doi.org/10.1109/t-ed.1977.18985

Abstract

In analog signal processing applications, the charge handling capacity of a charge coupled device (CCD) is an important parameter that determines the dynamic range. In this paper, approximate expressions for the signal handling capacity for surface-channel and buried-channel CCD's are derived and compared. The upper limit for the buried-channel charge capacity is imposed by the onset of surface electron accumulation.

Keywords

CHARGE CAPACITY
CHARGE COUPLED
HANDLING CAPACITY
BURIED CHANNEL
ANALOG
IMPOSED
ACCUMULATION