GaAs(110) terrace-width distributions and kink formation

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Abstract
Scanning-tunneling-microscopy studies of [1¯12] and [11¯0] step structures on cleaved GaAs(110) show that [1¯12] steps are straight whereas [11¯0] steps are made up of kinks along [1¯12]. These step and kink structures are very different from those on Si surfaces. Through quantitative analysis of terrace-width and kink-length distributions, we show that [11¯0] steps are weakly interacting while kinks are noninteracting.