Effects of intentionally introduced hydrogen on the electrical properties of ZnO layers grown by metalorganic chemical vapor deposition
- 27 February 2002
- journal article
- letter
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 91 (6) , 3922-3924
- https://doi.org/10.1063/1.1452778
Abstract
Unintentionally doped ZnO layers grown epitaxially on a sapphire substrate have been exposed either to a hydrogen or deuterium plasma. Secondary ion mass spectroscopy measurements performed subsequently showed a rapid diffusion of hydrogen in these layers. Furthermore, the presence of hydrogen in the ZnO samples is found to be responsible for nearly a factor of 3 increase in the free electron concentration. This effect is attributed to the hydrogen passivation of compensating acceptor impurities present in the as-grown ZnO layers.This publication has 8 references indexed in Scilit:
- Hydrogen as a Cause of Doping in Zinc OxidePhysical Review Letters, 2000
- p-Type Electrical Conduction in ZnO Thin Films by Ga and N CodopingJapanese Journal of Applied Physics, 1999
- Evidence of hydrogen–carbon interactions in plasma hydrogenated carbon-doped n-InPApplied Physics Letters, 1998
- Interactions between hydrogen and group VI donors in GaAs and GaAlAsJournal of Applied Physics, 1995
- Hydrogen Diffusion in Compound SemiconductorsMaterials Science Forum, 1993
- Variation of Electrical Properties with Zn Concentration in GaPJournal of Applied Physics, 1969
- Hall Effect and Resistivity of Zn-Doped GaAsJournal of Applied Physics, 1966
- Hydrogen as a Donor in Zinc OxideThe Journal of Chemical Physics, 1956