Deposition of from the system at 1023 K and pressures from 1 down to 0.01 bar leads to controlled growth rates ranging from 40 to 1 μm/hr. Due to the surface kinetic limitation of the process, very uniform films are obtained at reduced pressures. The background impurity level is low; 77 K electron mobilities of 73,000 cm2 V−1 sec−1 were obtained for not purposely doped samples with electron concentrations in the upper 1014 cm−3region. Using as a dopant, the electron concentration increases linearly with the pressure. The sulfur‐doped films show the same values for the mobility and the saturation concentration of electrons as layers obtained at atmospheric pressure.