Isolation characteristics for laser diode optical switches

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Abstract
The isolation spectra for laser diode optical switches, which are the level difference between the on and off state attenuation, are calculated for n‐ and p‐type GaAlAs and InGaAsP using a Gaussian fit to the Halperin–Lax band tails and Stern’s matrix element model. The measured and calculated isolation spectra for a GaAlAs laser diode are closely coincident with one another. The calculated results show that p‐type materials, which contain small background carrier concentrations, are suitable for high isolation laser diode optical switches. Especially, it becomes clear that p‐type In0.533Ga0.467As laser diode optical switches, whose operating wavelength is 1.65 μm, give the best isolation characteristics.