GaAs/AlGaAs power heterobipolar transistor fabricated on silicon substrate

14 September 1989

journal article
Published by Institution of Engineering and Technology (IET) in Electronics Letters

Vol. 25 (19) , 1268-1269
https://doi.org/10.1049/el:19890849

Abstract

A GaAs/AlGaAs power HBT was fabricated on a silicon substrate, where the thermal conductance is reduced by a factor of 2.8 compared with that on bulk GaAs. Owing to the newly developed monolithically grown ballast resistor over an emitter region, the experimentally fabricated device has shown the highest collector current of over 2.5 A for a device with an active device area of 0.14 mm².

Keywords

GAAS-ALGAAS-SI
III-V SEMICONDUCTORS
2.5 A
EMITTER REGION
COLLECTOR CURRENT
POWER HBT
MONOLITHICALLY GROWN BALLAST RESISTOR
SI SUBSTRATE
THERMAL CONDUCTANCE
HETEROJUNCTION BIPOLAR TRANSISTOR

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