Kinetics and nucleation model of the C49 to C54 phase transformation in TiSi2 thin films on deep-sub-micron n+ type polycrystalline silicon lines
- 16 October 1995
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 67 (16) , 2308-2310
- https://doi.org/10.1063/1.115135
Abstract
A detailed kinetic study of the C49 to C54 phase transformation in TiSi2 thin films was performed, to obtain the full time, temperature, and linewidth dependence of the fraction transformed during rapid thermal annealing on patterned deep‐sub‐micron lines. A Johnson–Mehl–Avrami kinetic analysis showed Avrami exponents of 0.8±0.2 for all submicron lines and 1.9±0.2 for a 40 μm side square structure. The activation energy of 3.9 eV was independent of linewidth. Transformation times increased dramatically as linewidth decreased. A kinetic model based on the density of nucleation sites as a function of linewidth and C49 grain size is proposed and shown to fit the data.Keywords
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