The dose dependence of 45 keV V+and Bi+Ion sputtering yield of copper
- 1 January 1973
- journal article
- research article
- Published by Taylor & Francis in Radiation Effects
- Vol. 19 (4) , 257-261
- https://doi.org/10.1080/00337577308232257
Abstract
The sputtering yield of 45 keV V+ ions on copper is found to decrease with increasing dose even for very large doses, whilst the yield of 45 keV Bi+ ions on copper increases with increasing dose until approximately ten times the projected range of the Bi+ ions has been sputtered away. The fate of the incoming V+ and Bi+ ions was investigated. A radiotracer technique showed that vanadium accumulated on the target surface, whilst bismuth diffused into the target, as was seen by means of Rutherford-scattering of light ions.Keywords
This publication has 10 references indexed in Scilit:
- The Z1dependence of heavy-ion sputtering yield in copperRadiation Effects, 1972
- Anomalous behaviour of Zn under metal ion bombardmentPhysics Letters A, 1971
- Cone Formation on Metal Targets during SputteringJournal of Applied Physics, 1971
- Theory of Sputtering. I. Sputtering Yield of Amorphous and Polycrystalline TargetsPhysical Review B, 1969
- Microtopography of surfaces eroded by ion-bombardmentJournal of Materials Science, 1969
- The formation of precipitate phases in aluminium by ion implantationPhilosophical Magazine, 1969
- A sectioning technique for copper, silver, and gold and its application to penetration and diffusion studiesRadiation Effects, 1969
- The sputtering of metals with noble gas ions; an experiment to determine the fate of the injected gas and its influence on the sputtering processPhilosophical Magazine, 1964
- Sputtering experiments in the high energy regionNuclear Instruments and Methods, 1961
- Surface analysis by charged particle spectroscopyNuclear Instruments and Methods, 1959