Postgrowth heat-treatment effects in high-purity liquid-phase-epitaxial In 0.53 Ga 0.47 As

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Abstract
Heat treatment at 670°C for 20 min has been performed on high-purity In0.53Ga0.47As/InP: Fe layers grown by different melt-baking schemes. Layers with higher purity (μ77 K ̃ 55000 cm2/Vs) exhibit increased resistivity and the presence of a deep level after the heat treatment. It is possible that the deep level, apparently 0.56 eV above the valence band, results from Fe outdiffusion from the substrate.