An Improved Model for Analyzing Hole Mobility and Resistivity in p‐Type Silicon Doped with Boron, Gallium, and Indium
- 1 March 1981
- journal article
- Published by The Electrochemical Society in Journal of the Electrochemical Society
- Vol. 128 (3) , 601-608
- https://doi.org/10.1149/1.2127466
Abstract
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