The effect of carbide and nitride additives on the oxidation resistance of silicon nitride ceramics
- 1 January 1988
- journal article
- research article
- Published by Taylor & Francis in High Temperature Technology
- Vol. 6 (2) , 79-87
- https://doi.org/10.1080/02619180.1988.11753383
Abstract
The mechanism of high temperature oxidation in air (up to 1500°C) for silicon nitride materials containing SiC, TiN, TiC0.5N0.5, ZrN and EN was investigated. The effect of non-oxide refractory compounds on the oxidation resistance of ceramics, taking into account the sample preparation method (pressureless or reaction sintering, hot pressing) and sintering aids was analysed. The results indicate that the addition of SiC to silicon nitride neither decreases the oxidation resistance nor affects the composition of the oxidation products. However, addition of easily oxidized compounds causes lower oxidation resistance and influences the oxidation mechanisms as well as the composition and protective properties of the oxide layer. The effective application of different thermal analyses for studying silicon nitride ceramics was demonstrated.Keywords
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