Performance of AlGaN/GaN High Electron Mobility Transistors at Nanoscale Gate Lengths
- 1 July 2002
- journal article
- research article
- Published by American Scientific Publishers in Journal of Nanoscience and Nanotechnology
- Vol. 2 (3) , 325-332
- https://doi.org/10.1166/jnn.2002.092
Abstract
The DC and RF performance of AlGaN/GaN high electron mobility transistors with nanoscale gate lengths is presented. The layer structures were grown by either metal organic chemical vapor deposition or rf plasma-assisted molecular beam epitaxy. Excellent scaling properties were observed as a function of both gate length and width and confirm that these devices are well suited to both high speed switching and power microwave applications.This publication has 0 references indexed in Scilit: