Exciton-Enhanced Photoemission from Doped Solid Rare Gases

12 August 1974

journal article
research article
Published by American Physical Society (APS) in Physical Review Letters

Vol. 33 (7) , 415-418
https://doi.org/10.1103/physrevlett.33.415

Abstract

We report the observation of exciton-induced photoemission resulting from electronic energy transfer from "free" exciton levels to impurity states in solid Xe and Kr. A diffusion length of

l_{0} ≃ 75

Å for Wannier excitons in solid Xe was deduced, corresponding to a diffusion coefficient of

D = 0.5

{cm}^{2}

\sec^{- 1}

. The energy of the bottom of the conduction band is

V_{0} = - 0.46 \pm 0.1

eV for Xe and

V_{0} = - 0.23 \pm 0.1

eV for Kr.

Keywords

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